Phase noise modelling and optimisation of microwave SiGe amplifiers for sapphire oscillators applications
نویسندگان
چکیده
The nonlinear modelling of different microwave SiGe bipolar transistors has been performed. Using these models, the phase noise of an amplifier is computed, taking into account two different types of noise, the microwave additive noise floor and the up-converted 1/f noise. The simulation technique combines different approaches available in a commercial CAD software. Theoretical results are then compared to the experiment, both for a single stage amplifier and a two stage amplifier. Finally, the phase noise of an optimised sapphire oscillator is calculated.
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